ABB PM511V16 3BSE011181R1 modular

ABB PM511V16 3BSE011181R1 Table 1 — Preferred blocking voltage ratings for high power semiconductors used in 3-level voltage  source inverters (VSIs). Inverter output powers of up to 8 MW can be realized with 2-level inverters utilizing the large  asymmetric 4.5 kV HPT-IGCT (91 millimeter wafer diameter) as shown in Figure 2. The flattening of the curves for the non-HPT devices towards lower frequencies is due to save operating area (SOA) limitations. 3-level inverters even achieve power levels that are about twice  the power of 2-level inverters. Accordingly, converters rated 10 MW and beyond can be realized without the need of paralleling and/or series connection of devices

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